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| SUM110N05-06L New Product Vishay Siliconix N-Channel 55-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 55 FEATURES rDS(on) (W) ID (A) 110 92 0.006 @ VGS = 10 V 0.085 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D Automotive and Industrial D TO-263 G G DS S N-Channel MOSFET Top View SUM110N05-06L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) _ Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C c TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 55 "20 110 63 240 60 180 158b 3.7 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient--PCB Mountc Junction-to-Case Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Symbol RthJA RthJC Limit 40 0.95 Unit _C/W _ Document Number: 72005 S-21713--Rev. A, 07-Oct-02 www.vishay.com 1 SUM110N05-06L Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 44 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 44 V, VGS = 0 V, TJ = 125_C VDS = 44 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 120 0.0047 0.0066 0.006 0.0085 0.0102 0.0132 S W 55 V 1 3 "100 1 50 250 A m mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.27 W ID ^ 110 A, VGEN = 10 V, RG = 2.5 W VDS = 30 V, VGS = 10 V, ID = 110 A VGS = 0 V, VDS = 25 V, f = 1 MHz 3300 625 310 65 15 16 15 15 35 15 25 25 55 25 ns 100 nC pF Source-drain Diode Ratings and Characteristics (Tc = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 110 A, di/dt = 100 A/ms IF = 110 A, VGS = 0 V 1.0 70 2.5 0.09 110 240 1.5 125 5 0.31 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72005 S-21713--Rev. A, 07-Oct-02 SUM110N05-06L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 250 Vishay Siliconix Transfer Characteristics 200 I D - Drain Current (A) VGS = 10 thru 5 V I D - Drain Current (A) 200 150 4V 100 150 100 TC = 125_C 25_C -55 _C 0 50 2, 3 V 0 0 2 4 6 8 10 50 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 200 TC = -55_C r DS(on) - On-Resistance ( W ) 0.015 On-Resistance vs. Drain Current 160 g fs - Transconductance (S) 0.012 25_C 120 125_C 80 0.009 VGS = 4.5 V 0.006 VGS = 10 V 0.003 40 0 0 15 30 45 60 75 90 0.000 0 20 40 60 80 100 120 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Capacitance 5000 V GS - Gate-to-Source Voltage (V) 20 Gate Charge 4000 C - Capacitance (pF) Ciss 3000 16 VGS = 30 V ID = 110 A 12 2000 Crss 1000 Coss 8 4 0 0 11 22 33 44 55 0 0 20 40 60 80 100 120 VDS - Drain-to-Source Voltage (V) Document Number: 72005 S-21713--Rev. A, 07-Oct-02 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM110N05-06L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A r DS(on) - On-Resistance (W) (Normalized) 2.0 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.5 TJ = 150_C 10 TJ = 25_C 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 70 On-Resistance vs. Junction Temperature ID = 10 m A r DS(on) - On-Resistance (W) (Normalized) 100 I Dav (a) 65 10 IAV (A) @ TJ = 25_C 60 1 IAV (A) @ TJ = 150_C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 55 50 -50 -25 0 25 50 75 100 125 150 175 tin (Sec) TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72005 S-21713--Rev. A, 07-Oct-02 SUM110N05-06L New Product THERMAL RATINGS Maximum Drain Current vs. Case Temperature 120 1000 Limited by rDS(on) 100 100 I D - Drain Current (A) 80 I D - Drain Current (A) 100 ms 10 ms Vishay Siliconix Safe Operating Area 60 10 40 1 ms 1 TC = 25_C Single Pulse 10 ms 100 ms dc 20 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.05 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (sec) Document Number: 72005 S-21713--Rev. A, 07-Oct-02 www.vishay.com 5 This datasheet has been download from: www..com Datasheets for electronics components. |
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